Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.63-66
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- 2003
Electrical Characteristics of Oxide due to High Temperature Diffusion.
고온 확산공정에 따른 산화막의 전기적 특성
- Hong, N.P. (Gwangwoon Univ.) ;
- Choi, D.J. (Fairchild Korea Semiconductor Corp.) ;
- Ko, K.Y. (Gwangwoon Univ.) ;
- Lee, T.S. (Gwangwoon Univ.) ;
- Choi, B.H. (Fairchild Korea Semiconductor Corp.) ;
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Hong, J.W.
(Gwangwoon Univ.)
- 홍능표 (광운대학교 전기공학과) ;
- 최두진 (페어차일드 코리아 반도체(주)) ;
- 고길영 (광운대학교 전기공학과) ;
- 이태선 (광운대학교 전기공학과) ;
- 최병하 (페어차일드 코리아 반도체(주)) ;
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홍진웅
(광운대학교 전기공학과)
- Published : 2003.07.10
Abstract
In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.