Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on the crystallographic properties of AlN/Al/SiO$_2$/Si thin film for FBAR

FBAR용 AlN/Al/SiO$_2$/Si 박막의 결정학적 특성에 관한 연구

  • 김건희 (경원대학교 전기 정보 공학과) ;
  • 금민종 (경원대학교 전기 정보 공학과) ;
  • 최형욱 (경원대학교 전기 정보 공학과) ;
  • 김경환 (경원대학교 전기 정보 공학과)
  • Published : 2003.07.10
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Abstract

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

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