Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Crystalline Analysis of Carbon Nitride Films Deposited by Reactive Sputtering System

반응성 스퍼터링 장치로 제작된 질화탄소막의 결정성 분석

  • Lee, Ji-Gong (Department of Electrical and Electronic Engineering, Kyungnam Univ.) ;
  • Ha, Se-Geun (Department of Electrical and Electronic Engineering, Kyungnam Univ.) ;
  • Lee, Sung-Pil (Department of Electrical and Electronic Engineering, Kyungnam Univ.)
  • 이지공 (경남대학교 전기전자공학부) ;
  • 하세근 (경남대학교 전기전자공학부) ;
  • 이성필 (경남대학교 전기전자공학부)
  • Published : 2003.07.10
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Abstract

Carbon nitride films with ${\beta}-C_3N_4$ crystals were grown by rf reactive magnetron sputtering system with negative DC bias. Chamber baking system to supply whole chamber with activation energy was used to reduce the contamination of H and O atoms. XRD peaks showed the existence of crystalline ${\beta}-C_3N_4$(200) and lonsdaleite structures. FTIR spectroscopy studies revealed that the film contain ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ with $1011\;cm^{-1},\;1257\;cm^{-1}\;and\;1529\;cm^{-1}$ peaks. We could also find the grain growth of hexagonal structure from SEM photograph, which is coincident with the theoretical carbon nitride unit cell. ${\alpha}$-step was used to make the thickness profile of the grown films.

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