The characteristics of joints with In-Ag alloy

Indium-silver alloy를 이용한 접합의 특성

  • 김재욱 (고려대학교 대학원 전기공학과) ;
  • 김제윤 (고려대학교 대학원 전기공학과) ;
  • 김상식 (고려대학교 대학원 전기공학과) ;
  • 성만영 (고려대학교 대학원 전기공학과)
  • Published : 2003.07.10

Abstract

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

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