Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.263-266
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- 2003
The GaAs Leakage Current Characteristics of GaAs MESFET's using Source Ground Status
GaAs MESFET의 Source 접지상태에 따른 게이트 누설 전류 특성
- Won, Chang-Sub (Konkuk Univ.) ;
- Yu, Young-Han (Konkuk Univ.) ;
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Ahn, Hyung-Keun
(Konkuk Univ.)
;
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Han, Deuk-Young
(Konkuk Univ.)
- Published : 2003.07.10
Abstract
The gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. Next, the gate to drain current has been obtained with a ground source. The difference of two current has been tested and provide that the existence of another source to Schotuy barrier height against the image force lowering effect.