Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ohmic Characteristics of TiN/3C-SiC for High-temperature MEMS Applications

초고온 MEMS용 TiN/3C-SiC의 Ohmic 특성

  • 정수용 (동서대학교 정보시스템공학부) ;
  • 우형순 (동서대학교 정보시스템공학부) ;
  • 김규현 (동서대학교 응용공학부) ;
  • 정귀상 (동서대학교 정보시스템공학부)
  • Published : 2003.07.10
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Abstract

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.

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