Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
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- Pages.868-871
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- 2003
Reactive ion etching characterization of SiC film deposited by thermal CVD method for MEMS application
MEMS 적용을 위한 thermal CVD 방법에 의해 증착한 SiC막의 etching 특성 평가
- Choi, Gi-Yong (HanYang Uni.) ;
- Choi, Duck-Kyun (HanYang Uni.) ;
- Park, Ji-Yeon (KAERI) ;
- Kim, Tae-Song (KIST)
- Published : 2003.07.10
Abstract
In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of