Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Crystallography properties of $ZnO/AZO/SiO_2/Si$ thin film for FBAR

FBAR용 $ZnO/AZO/SiO_2/Si$ 박막의 결정학적 특성에 관한 연구

  • 강태영 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과) ;
  • 손인환 (신성대학교 전기과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2003.07.10
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Abstract

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

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