Electrical Properties of 4th generational Dendrimer Containing Azo-group

아조 기능기를 가진 제4세대 덴드리머의 전기적 특성

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.