The Study of Annealing Effect on the Dark Current of InGaAs Waveguide Photodiodes

InGaAs 도파로형 광다이오드의 암전류에 대한 열 처리 효과에 관한 연구

This paper presents the temperature annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for high-speed optical receivers. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at $250^{\circ}C$ whereas the dark current and the breakdown voltage are almost constant after annealing at $200^{\circ}C$. Based on the experimental results, the long-term annealing is more effective for the dark current improvement than the conventional curing process.