Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Poly-Si Thin Films by Hot-wire Chemical Vapor Deposition Method

열선 CVD법에 의한 다결정 실리콘 박막증착 및 특성분석

  • 정연식 (한국에너지기술연구원 태양광연구센터) ;
  • 이정철 (한국에너지기술연구원 태양광연구센터) ;
  • 김석기 (한국에너지기술연구원 태양광연구센터) ;
  • 윤경훈 (한국에너지기술연구원 태양광연구센터) ;
  • 송진수 (한국에너지기술연구원 태양광연구센터) ;
  • 박이준 (한국에너지기술연구원 태양광연구센터) ;
  • 권성원 (한국과학기술원) ;
  • 임굉수 (한국과학기술원)
  • Published : 2003.07.10
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Abstract

This paper presents the deposition characterization of polycrystalline silicon films by the HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}C$ (Tf), 30 mTorr and $2{\sim}12%$ for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

Keywords