Poly-Si Thin Film Solar Cells by Hot-wire CVD

  • Lee, J.C. (KIER Photovoltaic Research Center) ;
  • Chung, Y.S. (KIER Photovoltaic Research Center) ;
  • Kim, S.K. (KIER Photovoltaic Research Center) ;
  • Yoon, K.H. (KIER Photovoltaic Research Center) ;
  • Song, J.S. (KIER Photovoltaic Research Center) ;
  • Park, I.J. (KIER Photovoltaic Research Center) ;
  • Kwon, S.W. (KAIST) ;
  • Lim, K.S. (KAIST)
  • Published : 2003.07.10

Abstract

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

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