Pentacene OTFTs with $Al_2O_3$ gate insulator by Atomic Layer Deposition Process

  • Jin, Sung-Hun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Kim, Jin-Wook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • Published : 2003.07.09

Abstract

Pentacene OTFTs of $Al_2O_3$ insulator treated with a diluted PMMA were fabricated for the application of the low voltage operation and large area displays. The operation voltage of 15 V and the mobility of 0.35 $cm^2/Vsec$ are obtained even adopting the thick dielectric of 100 nm which was deposited by atomic layer deposition at the temperature of $150^{\circ}C$. The current on-off ratio was $4.1{\times}10^4$ for the OTFTs treated with 9:1 PMMA and good saturation characteristics were obtained as drain voltage increases.

Keywords