한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.149-152
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- 2003
Dopant Activation and Damage Recovery of Ion Shower Doped Poly-Si According to Various Annealing Techniques
- Park, Jong-Hyun (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Kim, Dong-Min (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Ro, Jae-Sang (Dep't of Mat. Sci. and Eng., Hongik University) ;
- Choi, Kyu-Hwan (Samsung SDI CO., LTD.) ;
- Lee, Ki-Yong (Samsung SDI CO., LTD.)
- Published : 2003.07.09
Abstract
Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of
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