한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Properties of Sequential Lateral Solidification (SLS) Crystallized Poly-Si Films and Melting Process Simulation

  • Kim, Yong-Hae (Basic Research Lab., Electronics and Telecommunications Research Institute) ;
  • Sohn, Choong-Yong (Basic Research Lab., Electronics and Telecommunications Research Institute) ;
  • Chung, Choong-Heui (Basic Research Lab., Electronics and Telecommunications Research Institute) ;
  • Ko, Young-Wook (Basic Research Lab., Electronics and Telecommunications Research Institute) ;
  • Lee, Jin-Ho (Basic Research Lab., Electronics and Telecommunications Research Institute)
  • Published : 2003.07.09
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Abstract

The large size grain of poly-Si film is obtained above the upper limit of excimer laser energy at which the random nucleation occurs. We simulate the time dependent temperature profile of ${\alpha}-Si/SiO_2/Si$ substrate structure according to the excimer laser energy with $ANSYS^{\circledR}$ simulator. As the thickness is increased, the laser energy for the melting of ${\alpha}-Si$ film is increased.

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