Dependence of Stress-Induced Leakage Current on Low Temperature Polycrystalline Silicon TFTs

  • Chen, Chih-Chiang (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
  • Chang, Jiun-Jye (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
  • Chuang, Ching-Sang (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
  • Wu, Yung-Fu (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
  • Sheu, Chai-Yuan (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI))
  • Published : 2003.07.09

Abstract

The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.

Keywords