한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The Study of a-Si Film Crystallization using an XeCl Laser Annealing on the Plastic Substrate

  • Kim, Do-Young (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Suh, Chang-Ki (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Shim, Myung-Suk (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Chi-Hyung (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (New materials Lab.(BK21 lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Lee, Min-Chul (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Gu (School of Electrical Engineering, Seoul National University)
  • Published : 2003.07.09
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Abstract

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

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