한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.653-655
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- 2003
Electrical Characteristics of Pentacene-based TFTs with Stacked Gate Dielectrics
- Kang, Chang-Heon (Dept. of Electrical & Control Engineering, Hong-Ik Univ.) ;
- Park, Jae-Hoon (Dept. of Electrical & Control Engineering, Hong-Ik Univ.) ;
- Lee, Yong-Soo (Dept. of Electrical & Control Engineering, Hong-Ik Univ.) ;
- Kim, Yeon-Ju (Dept. of Electrical & Control Engineering, Hong-Ik Univ.) ;
- Choi, Jong-Sun (Dept. of Electrical & Control Engineering, Hong-Ik Univ.)
- Published : 2003.07.09
Abstract
Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].
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