Crystallization behavior of a-Si film using UV pulsed laser

We studied the crystallization behavior of LP-CVD a-Si film using UV pulsed laser. With increase in the shot number of irradiation by fixing its energy density, poly-Si film having a large grain size of $0.5 {\mu}m$ was obtained. By analyzing the crystallized Si films using optical analysis such as Raman spectroscopy or AFM technique etc., conspicuous correlation between the grain size and the resultant film properties such as the stress or the roughness has been found. With the increase in the energy density or the shots number of laser, remarkable grain growth occurred following to the roughness formation corresponding to the increase in the tensile stress.