한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.690-693
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- 2003
Finding interstitial oxygen in an Si substrate during low temperature plasma oxidation
- Kim, Bo-Hyun (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Ahn, Jin-Hyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
- Published : 2003.07.09
Abstract
An Si substrate (100) was oxidized at
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