Measurement of ion induced secondary electron emission $coefficient({\gamma})$ and work function of vacuum annealed MgO protective layer in AC PDP

  • Lim, J.Y. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Jeong, H.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Park, W.B. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Oh, J.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Jeong, J.M. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Choi, E.H. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University)
  • Published : 2003.07.09

Abstract

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

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