한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Measurement of ion-induced secondary electron emission coefficient for MgO thin film with $O_{2}$ plasma treatment

  • Jeong, H.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Oh, J.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Lim, J.Y. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Cho, J.W. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Choi, E.H. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University)
  • Published : 2003.07.09
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Abstract

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

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