Influence of surface geometrical structures on the secondary electron emission coefficient $({\gamma})$ of MgO protective layer

  • Park, W.B. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Lim, J.Y. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Oh, J.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Jeong, H.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Jeong, J.C. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Kim, S.B. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Cho, I.R. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Cho, J.W. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Kang, S.O. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University) ;
  • Choi, E.H. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophvsics, Kwanqwoon University)
  • Published : 2003.07.09

Abstract

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

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