한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Controlling Preferred Orientation of ITO Thin Films by RF-Magnetron Sputtering Method

  • Park, Ju-O (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
  • Kim, Jae-Hyung (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
  • Lee, Joon-Hyung (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
  • Kim, Jeong-Joo (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
  • Cho, Sang-Hee (Dept. of Inorganic Materials Engineering Kyungpook National University)
  • Published : 2003.07.09
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Abstract

Sn-doped $In_{2}O_{3}$ (ITO) thin film is one of the materials widely on research not only in the academic fields but also in industrial fields because of their transparency, high conductivity and good adhesion characteristics on substrate. ITO thin films are usually preferred oriented to one of the (222), (400), and (440) planes during crystallization process, which is dependent on processing variables. The preferred orientation affects electrical, optical and etching properties of the films. In this study, thin films of preferred oriented in different orientation were fabricated by controlling processing variables. The crystallization behavior, grain size, surface roughness, transparency and electrical properties of the thin films in different orientation were examined.

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