한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.822-825
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- 2003
Crystallization Behavior of ITO Thin Films with and without External Heating during RF-Magnetron Sputtering
- Park, Ju-O (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
- Lee, Joon-Hyung (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
- Kim, Jeong-Joo (Dept. of Inorganic Materials Engineering Kyungpook National University) ;
- Cho, Sang-Hee (Dept. of Inorganic Materials Engineering Kyungpook National University)
- Published : 2003.07.09
Abstract
Indium tin oxide (ITO) thin films were deposited by RF-magnetron sputtering method and the crystallization behavior of the films with no external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed.
Keywords