한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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High voltage MOSFET fabricated by using a standard CMOS logic process to drive the top emission OLEDs in silicon-based OELDs

  • Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Kwon, Hyuck-In (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Jin, Sung-Hun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Chang-Ju (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Myung-Won (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Kyung, Jae-Woo (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Cho, Il-Whan (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • Published : 2003.07.09
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Abstract

Using the conventional standard CMOS logic process, the high voltage MOSFET to drive top emission OLEDs was fabricated for the silicon-based organic electroluminescent display. The drift region of the conventional high voltage MOSFET was implemented by the n-well of the logic process. The measurement result shows a good saturation characteristic up to 50 V without breakdown phenomena.

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