한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.998-1000
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- 2003
Thin Film Morphology Pentacene Thin Film Using Low-Pressure Gas Assisted Organic Vapor Deposition(LP-GAOVD)
- Ahn, Seong-Deok (Basic Research Lab. & ETRI) ;
- Kang, Seung-Youl (Basic Research Lab. & ETRI) ;
- Lee, Yong-Eui (Basic Research Lab. & ETRI) ;
- Kim, Chul-Am (Basic Research Lab. & ETRI) ;
- Joung, Meyong-Ju (Basic Research Lab. & ETRI) ;
- Suh, Kyung-Soo (Basic Research Lab. & ETRI)
- Published : 2003.07.09
Abstract
We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.
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