Effects of ZnS Insertion on the Characteristics of CaS:Pb Thin Film Phosphor

  • Park, Sang-Hee Ko (Basic Research Laboratory Electronics and Telecommunications Research Institute) ;
  • Kang, Seung-Youl (Basic Research Laboratory Electronics and Telecommunications Research Institute) ;
  • Kim, Kwang-Bok (Basic Research Laboratory Electronics and Telecommunications Research Institute) ;
  • Kim, Dong-Il (Basic Research Laboratory Electronics and Telecommunications Research Institute) ;
  • Yun, Sun-Jin (Basic Research Laboratory Electronics and Telecommunications Research Institute)
  • Published : 2003.07.09

Abstract

The effects of ZnS insertion on the characteristics of CaS:Pb phosphor were investigated. The intensity of photoluminescence of ZnS inserted CaS:Pb excited by 347nm were increased while that excited by 254nm was unchanged, compared to those of CaS:Pb thin film. The electroluminescent display having ZnS inserted CaS:Pb showed lower threshold voltage and higher efficiency than those of CaS:Pb ELD device.

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