STRUCTURAL MORPHOLOGY AND DIELECTRIC PROPERTIES OF POLYANILINE-EMERALDINE BASE AND POLY METHYL METHACRYLATE THIN FILMS PREPARED BY SPIN COATING METHOD

  • Shekar, B. Chandar (System on Chip Process Research Center, Dept. of Chemical Engineering, Pohang University of Science and Technology) ;
  • Yeon, Ji (System on Chip Process Research Center, Dept. of Chemical Engineering, Pohang University of Science and Technology) ;
  • Rhee, Shi-Woo (System on Chip Process Research Center, Dept. of Chemical Engineering, Pohang University of Science and Technology)
  • Published : 2003.07.09

Abstract

Structural morphology, annealing behavior and dielectric properties of polyaniline-emeraldine base (Pani-EB) and poly methyl methacrylate (PMMA) thin films prepared by spin coating technique have been studied. MIM and MISM structures were used to investigate annealing and dielectric behavior. The XRD and AFM spectrum of as grown and annealed thin films indicates the amorphous nature. The observed amorphous phase, low loss, dielectric behavior and thermal stability even at high temperatures implies the feasibility of utilizing PMMA and Pani-EB thin films as gate dielectric insulator layer in organic thin film transistors which can find application in flat panel display.

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