Development of a Low Temperature Doping Technique for Application in Poly-Si TFT on Plastic Substrates

  • Hong, Wan-Shick (Dept. of Electronics Engineering, Sejong University) ;
  • Kim, Jong-Man (Dept. of Electronics Engineering, Sejong University)
  • Published : 2003.07.09

Abstract

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

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