Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.08a
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- Pages.94-97
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- 2003
Frequency Characteristics of a FBAR using ZnO Thin Film
ZnO 압전박막을 이용한 FBAR의 주파수 응답특성
- Do, Seung-Woo (Kyungpook National University) ;
- Jang, Cheol-Yeong (Kyungpook National University) ;
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Choi, Hyun-Chul
(Kyungpook National University)
;
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Lee, Yong-Hyun
(Kyungpook National University)
- Published : 2003.08.22
Abstract
This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.