Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Oxide CMP Removal Rate and Non-uniformity as a function of Slurry Composition

슬러리의 조성에 따른 산화막 CMP 연마율과 균일도 특성

  • Ko, Pi-Ju (Dep. of Electrical Engineering of Chosun Univ.) ;
  • Lee, Woo-Sun (Dep. of Electrical Engineering of Chosun Univ.) ;
  • Choi, Kwon-Woo (Dep. of Electrical Engineering of Chosun Univ.) ;
  • Shin, Jae-Wook (Dep. of Electrical Engineering of Chosun Univ.) ;
  • Seo, Yong-Jin (Dep. of Electrical and Electronic Engineering of Daebul Univ.)
  • 고필주 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 최권우 (조선대학교 전기공학과) ;
  • 신재욱 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2003.05.16
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Abstract

As the device feature size is reduced to the deep sub-micron regime, the chemical mechanical polishing (CMP) technology is widely recognized as the most promising method to achieve the global planarization of the multilevel interconnection for ULSI applications. However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

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