Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05c
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- Pages.158-161
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- 2003
Study on Cu CMP by using Semi-Abrasive Free Slurry
준 무연마제 슬러리를 아용한 Cu CMP 연구
- Kim, Nam-Hoon (Chung-Ang University) ;
- Lim, Jong-Heun (Dongjin Semichem) ;
- Eom, Jun-Chul (Chung-Ang University) ;
- Kim, Sang-Yong (Dongbu Anam Semiconductor Inc.) ;
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Kim, Chang-Il
(Chung-Ang University)
;
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Chang, Eui-Goo
(Chung-Ang University)
- Published : 2003.05.16
Abstract
The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.