Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Static and Transient Simulation of High Power IGCT Devices

대용량 IGCT 소자의 정상상태 및 과도상태 특성 해석

  • 김상철 (한국진기연구원 전력반도체그룹) ;
  • 김형우 (한국진기연구원 전력반도체그룹) ;
  • 김은동 (한국진기연구원 전력반도체그룹)
  • Published : 2003.05.16
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Abstract

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

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