Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.06b
- /
- Pages.347-350
- /
- 2004
Extraction of Bias and Gate Length dependent data of Substrate Parameters for RF CMOS Devices
RF CMOS 소자 기판 파라미터의 바이어스 및 게이트 길이 종속데이터 추출
- Lee, Yong-Taek (Hankuk University of Foreign Studies, Korea) ;
- Choi, Mun-Sung (Hankuk University of Foreign Studies, Korea) ;
- Lee, Seong-Hearn (Hankuk University of Foreign Studies, Korea)
- Published : 2004.06.01
Abstract
The substrate parameters of Si MOSFET equivalent circuit model were directly extracted from measured S-Parameters in the GHz region by using simple 2-port parameter equations. Using the above extract ion method, bias and gate length dependent curves of substrate parameters in the RF region are obtained by varying drain voltage at several short channel devices with various gate lengths. These extract ion data will greatly contribute to scalable RF nonlinear substrate modeling.
Keywords