A Simulator for High Energy E-beam Lithography for Nano-Patterning

나노패터닝을 위한 고에너지 전자빔 리소그래피 시뮬레이터 개발 및 검증

  • Kim Jinkwang (School of Electrical Engineering Seoul National University) ;
  • Kim Hak (School of Electrical Engineering Seoul National University) ;
  • Han Chanho (School of Electrical Engineering Seoul National University) ;
  • Chun Kukjin (School of Electrical Engineering Seoul National University)
  • 김진광 (서울대학교 전기공학부) ;
  • 김학 (서울대학교 전기공학부) ;
  • 한창호 (서울대학교 전기공학부) ;
  • 전국진 (서울대학교 전기공학부)
  • Published : 2004.06.01

Abstract

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

Keywords