대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

PVP 게이트 절연체의 농도에 대한 펜타센 TFT의 특성 변화

Pentacene TFT's Characteristic depending on the Density of PVP Gate Insulator

  • Byun Hyun-Sook (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
  • Xu Yong-Xian (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
  • Jung Hyun (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
  • Hwang Sung-Beam (Division of Electrical and Electronics and Computer Engineering) ;
  • Song Chung-Kun (Division of Electrical and Electronics and Computer Engineering Dong-A University)
  • 발행 : 2004.06.01
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초록

In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of $1.19{\times}10^6$ for the case of $10wt\%$ PVP copolymer mixed with $5wt\%$ poly(melamine-co-formaldehyde). Additionally using OTFTs with the above PVP gate insulator, we fabricated the integrated circuit including inverter which produced the gain of 5.56 on the glass substrate and gain of 9.7 on the plastic (PET) substrate. And the threshold voltage was respectively +8V and +14v$ldots$

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