Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on the electrical characteristic of Schottky diode fabricated using various metals based on SiC thin film deposited by PECVD

PECVD로 증착된 SiC을 박막의 다양한 금속으로 제작된 SiC Schottky diode 전기적 특성에 따른 연구

  • Song, J.H. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Kim, J.W. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Kim, J.G. (Electrical and Electronic Material Lab, Myong Ji University) ;
  • Lee, H.Y. (Electrical and Electronic Material Lab, Myong Ji University)
  • 송진형 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김정우 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김지균 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 이헌용 (명지대학교 전기공학과 전기전자재료연구실)
  • Published : 2004.11.05
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Abstract

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

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