Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Improving Forward Blocking Characteristics for Small Sized Lateral Trench Electrode Power MOSFET using Trench Isolation

수평형 파워 MOSFET에 있어서 트렌치 Isolation 적용에 의한 순방향 항복특성 개선을 위한 새로운 소자의 설계에 관한 연구

  • Kim, Jin-Ho (Department of Electrical Engineering, Korea University) ;
  • Kim, Je-Yoon (Department of Electrical Engineering, Korea University) ;
  • Ryu, Jang-Woo (Department of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University) ;
  • Kim, Ki-Nam (Memory Division, Samsung Electronics, Co., Ltd.)
  • 김진호 (고려대학교 전기공학과) ;
  • 김제윤 (고려대학교 전기공학과) ;
  • 유장우 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과) ;
  • 김기남 (삼성전자 메모리 사업부)
  • Published : 2004.07.05
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Abstract

In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

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