Optical annealing of doped ZnS nanoparticles through UV irradiation

UV 조사에 의한 doped ZnS 나노입자의 annealing 효과

  • Lee, Jun-Woo (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Kim, Jin-Hyoung (Department of Electrical Engineering, Korea University) ;
  • Park, Byung-Jun (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • Published : 2004.07.05

Abstract

ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

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