Optimization of Porous Silicon Reflectance for Multicrystalline Silicon Solar Cells

다공성 실리콘 반사방지막의 최적 반사율을 적용한 다결정 실리콘 태양전지

  • Kwon, J.H. (Strategic Energy Research Institute(SERI) Dept. of Electronics Engineering, Sejong University) ;
  • Kim, D.S. (Strategic Energy Research Institute(SERI) Dept. of Electronics Engineering, Sejong University) ;
  • Lee, S.H. (Strategic Energy Research Institute(SERI) Dept. of Electronics Engineering, Sejong University)
  • 권재홍 (세종대학교 전략에너지 연구소) ;
  • 김동섭 (세종대학교 전략에너지 연구소) ;
  • 이수홍 (세종대학교 전략에너지 연구소)
  • Published : 2004.07.05

Abstract

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

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