Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical characteristics of the multi-result MOSFET

Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석

  • Kim, Hyoung-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Sang-Cheol (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • S대, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Eun-Dong (Korea Electrotechnology Research Institute, Power Semiconductor Group)
  • 김형우 (한국전기연구원 전력반도체연구그룹) ;
  • 김상철 (한국전기연구원 전력반도체연구그룹) ;
  • 서길수 (한국전기연구원 전력반도체연구그룹) ;
  • 김은동 (한국전기연구원 전력반도체연구그룹)
  • Published : 2004.07.05
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Abstract

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

Keywords