한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.413-416
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- 2004
이온빔으로 질화처리된 사파이어기판위에 성장한 ZnO박막의 특성
Properties of ZnO thin film grown on $Al_2O_3$ substrate pretremented by nitrogen ion beam
- Park, Byung-Jun (Yonsei Uni) ;
- Jung, Yeon-Sik (Korea Institute Science and Technology) ;
- Park, Jong-Young (Korea Institute Science and Technology) ;
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Choi, Du-Jin
(Yonsei Uni)
;
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Choi, Won-Kook
(Korea Institute Science and Technology)
;
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Yoon, Seok-Jin
(Korea Institute Science and Technology)
- 발행 : 2004.07.05
초록
In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.