Design of High Efficiency CMOS Class E Power Amplifier for Bluetooth Applications

  • Chae Seung Hwan (Dept of Electronic, Computer and Telecommunication Eng., Pukyong National University) ;
  • Choi Young Shig (Dept of Electronic, Computer and Telecommunication Eng., Pukyong National University) ;
  • Choi Hyuk Hwan (Dept of Electronic, Computer and Telecommunication Eng., Pukyong National University) ;
  • Kim Sung Woo (Dept of Electronic, Computer and Telecommunication Eng., Pukyong National University) ;
  • Kwon Tae Ha (Dept of Electronic, Computer and Telecommunication Eng., Pukyong National University)
  • Published : 2004.08.01

Abstract

A two-stage Class E power amplifier operated at 2.44GHz is designed in 0.25-$\mu$m CMOS process for Class-l Bluetooth application. The power amplifier employs c1ass-E topology to exploit its soft-switching property for high efficiency. A preamplifter with common-mode configuration is used to drive the output-stage of Class-E type. The amplifier delivers 20-dBm output power with 70$\%$ PAE (power -added-efficiency) at 2-V supply voltage.

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