Transfer Characteristics of Poly-Si TFTs with Laser Energy Change

  • Published : 2004.08.23

Abstract

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

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