Effect of Stress of MgO protecting layer on Discharge Characteristics of AC-PDP

  • Lee, Mi-Jung (School of Materials Science and Engineering, Seoul National University) ;
  • Park, Sun-Young (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Soo-Gil (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University) ;
  • Moon, Sung-Hwan (School of Materials Science and Engineering, Seoul National University, Samsung SDI Corporate R&D Center) ;
  • Kim, Jong-Kuk (Korea Institute of Machinery & Materials)
  • 발행 : 2004.08.23

초록

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

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