Efficiency Enhancement of Organic Light Emitting Diode Using $TiO_2$ Buffer Layer

We have studied the effect of $TiO_2$ layer deposited by RF magnetron sputtering which is used as an ultra thin hole-injection buffer layer in organic light-emitting diode (OLED). The $TiO_2$ thin film layer prevents metallic ions from diffusing from the ITO layer to the organic layers and improves the balance of hole and electron injections and the interface characteristics between the electrode and the organic layer. With 2 nm thickness of $TiO_2$, the quantum efficiency was improved by 45 % compared to the device fabricated without the $TiO_2$ layer.