The Optimization of Indium Zinc Oxide Thin Film Process in Color Filter on Array structure

  • Lee, Je-Hun (Process Development Group 1 LCD Business, Samsung Electronics Co., Ltd.) ;
  • Kim, Jin-Suek (LCD R&D center LCD Business, Samsung Electronics Co.) ;
  • Jeong, Chang-Oh (LCD R&D center LCD Business, Samsung Electronics Co.) ;
  • Kim, Shi-Yul (LCD R&D center LCD Business, Samsung Electronics Co.) ;
  • Lim, Soon-Kwon (LCD R&D center LCD Business, Samsung Electronics Co.) ;
  • Souk, Jun-Hyung (LCD R&D center LCD Business, Samsung Electronics Co.)
  • Published : 2004.08.23

Abstract

For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

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