Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04b
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- Pages.34-37
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- 2004
Control of Slurry Flow Rate in Copper CMP
구리 CMP시 슬러리 Flow Rate의 조절
- Kim, Tae-Gun (Chung-Ang University) ;
- Kim, Nam-Hoon (Chung-Ang University) ;
- Kim, Sang-Yong (DongbuAnam Semiconductor) ;
- Seo, Yong-Jin (Daebul University) ;
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Chang, Eui-Goo
(Chung-Ang University)
- Published : 2004.04.24
Abstract
Recently advancing mobile communication tools and I.T industry, semiconductor device is requested more integrated, faster operation time and more scaled-down. Because of these reasons semiconductor device is requested multilayer interconnection. For the multilayer interconnection chemical mechanical polishing (CMP) becomes one of the most useful process in semiconductor manufacturing process. In this experiment, we focus on understand the characterize and improve the CMP technology by control of slurry flow rate. Consequently, we obtain that optimal flow rate of slurry is 170ml/min, since optimal conditions are less chemical flow and performance high with good selectivity to Ta. If we apply this results to copper CMP process. it is thought that we will be able to obtain better yield.