Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

CMP properties of $SnO_2$ thin film

$SnO_2$ 박막의 CMP 특성

  • 최권우 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 김태완 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2004.04.24
Download PDF
⟨ Previous Next ⟩

Abstract

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

Keywords